Reliability Analysis for Power Devices Which Undergo Fast Thermal Cycling

Power devices have to withstand fast thermal cycling in automotive applications. In order to guarantee reliability in these applications, a detailed understanding of the degradation mechanisms is required. One of these mechanisms is interlayer dielectric cracking, caused by the progressive plastic deformation of metal lines. In a previous publication, we have shown that DMOS transistors, with different active areas, which operate in similar conditions, have dissimilar reliabilities. This cannot be explained by state-of-the-art methods, which estimate reliability from the peak junction temperature. In this paper, extended measurement results of a DMOS transistor will be analyzed with the aid of electrothermal and thermomechanical simulations, and a new approach for reliability estimation will be proposed.

[1]  Cristian Boianceanu,et al.  Reliability characterization of power devices which operate under power cycling , 2015, 2015 International Semiconductor Conference (CAS).

[2]  Experimental Reliability Improvement of Power Devices Operated Under Fast Thermal Cycling , 2015, IEEE Electron Device Letters.

[3]  V. d'Alessandro,et al.  Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[4]  A. J. Mouthaan,et al.  Test chip for detecting thin film cracking induced by fast temperature cycling and electromigration in multilevel interconnect systems , 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).

[5]  M. Stecher,et al.  Electrothermal Simulation of Self-Heating in DMOS Transistors up to Thermal Runaway , 2013, IEEE Transactions on Electron Devices.

[6]  M. Stecher,et al.  A Temperature-Gradient-Induced Failure Mechanism in Metallization Under Fast Thermal Cycling , 2008, IEEE Transactions on Device and Materials Reliability.

[7]  P. Vena,et al.  Reliability characterization and FEM modeling of power devices under repetitive power pulsing , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[8]  Ralf Rudolf,et al.  Automotive 130 nm smart-power-technology including embedded flash functionality , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[9]  Martin Pfost,et al.  Influence of the On-Chip Metallization on Self-Heating in Integrated Power Technologies , 2014, IEEE Transactions on Semiconductor Manufacturing.

[10]  A. J. Mouthaan,et al.  A Reliability Model for interlayer dielectrics cracking during very fast thermal cycling , 2003 .

[11]  M. Stecher,et al.  Power-cycling of DMOS-switches triggers thermo-mechanical failure mechanisms , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

[12]  A. Lindemann,et al.  On the Origin of Thermal Runaway in a Trench Power MOSFET , 2011, IEEE Transactions on Electron Devices.

[13]  M. Stecher,et al.  Investigation and Improvement of Fast Temperature-Cycle Reliability for DMOS-Related Conductor Path Design , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[14]  I. Pages,et al.  Reliability characterization of LDMOS transistors submitted to multiple energy discharges , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[15]  M. Pfost,et al.  An Easily Implementable Approach to Increase the Energy Capability of DMOS Transistors , 2014, IEEE Transactions on Electron Devices.