论文信息 - Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates - 字舞流文

Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates

W. C. Hughes | N. El-Masry | S. Fujita | K. Bowers | J. Schetzina | J. Edmond | J. Cook | Mark L. Johnson | W. H. Rowland | J. Ren | Y. W. He | Y. W. He