Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused-ion-beam implantation

Low‐temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused‐ion‐beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.

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