Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
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[1] M W MAKOWSKI,et al. A slide rule for radiation calculations. , 1949, The Review of scientific instruments.
[2] L. Pincherle. Auger Effect in Semiconductors , 1955 .
[3] C. S. Fuller,et al. Chemical interactions among defects in germanium and silicon , 1956 .
[4] W. Shockley. Problems related to p-n junctions in silicon , 1961 .
[5] Herbert Kroemer,et al. Theory of a Wide-Gap Emitter for Transistors , 1957, Proceedings of the IRE.
[6] C. Neugebauer,et al. Structure and Properties of Thin Films , 1962 .
[7] W. Shockley,et al. Metal Precipitates in Silicon p‐n Junctions , 1960 .
[8] M. Prince. Silicon Solar Energy Converters , 1955 .
[9] M. Wolf,et al. Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation , 1960, Proceedings of the IRE.
[10] W. Shockley,et al. Solubility of Flaws in Heavily-Doped Semiconductors , 1960 .
[11] W. G. Pfann,et al. Radioactive and Photoelectric p‐n Junction Power Sources , 1954 .
[12] S. L. Belousov. TABLES OF FUNCTIONS , 1962 .
[13] A. Rose. Photovoltaic Effect Derived from the Carnot Cycle , 1960 .
[14] W. Shockley,et al. Photon-Radiative Recombination of Electrons and Holes in Germanium , 1954 .
[15] William Shockley,et al. Electrons and Holes in Semiconductors , 1952 .
[16] A. G. Chynoweth,et al. Internal Field Emission in Silicon p-n Junctions , 1957 .
[17] J. Loferski,et al. Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion , 1956 .
[18] J. H. Forster,et al. Electrical properties of gold-doped diffused silicon computer diodes , 1960 .
[19] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[20] C. S. Fuller,et al. A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power , 1954 .
[21] Helmut Müser. Thermodynamische Behandlung von Elektronenprozessen in Halbleiter-Randschichten , 1957 .
[22] William Shockley,et al. The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..