Improvement of metal-semiconductor-metal GaN photoconductors
暂无分享，去创建一个
[1] Peter K. Shu,et al. Direct observation of transferred-electron effect in GaN , 1995 .
[2] Piotr Perlin,et al. Mechanism of yellow luminescence in GaN , 1995 .
[3] M. Graef,et al. Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy , 1995 .
[4] Fernando Ponce,et al. High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .
[5] Michael S. Shur,et al. Gated photodetector based on GaN/AlGaN heterostructure field effect transistor , 1995 .
[6] Y. Shiraki,et al. Surface orientation dependence of growth rate of cubic GaN , 1994 .
[7] M. Asif Khan,et al. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers , 1992 .
[8] Takashi Mukai,et al. High-Power GaN P-N Junction Blue-Light-Emitting Diodes , 1991 .
[9] Z. C. Huang,et al. A simple and reliable method of thermoelectic effect spectroscopy for semi‐insulating III‐V semiconductors , 1991 .
[10] Z. C. Huang,et al. Deep level studies in MBE GaAs grown at low temperature , 1991 .