THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON

ABSTRACT Capture, optical and thermal discharge, and location of trapped electrons and holes in thermal silicon dioxide layers grown on silicon are reviewed. Charge trapping is discussed in oxides grown under various conditions (for instance, steam versus dry oxidation) and in oxides where impurites have been added by ion implantation or grown into the film at elevated temperatures. Characteristics of the trapping sites in terms of their spatial location, capture cross section, photoionization cross section, trap density, and energy depth in the forbidden gap are summarized for known traps. Techniques such as capacitance-voltage (C-V(l)) and photocurrent-voltage (photo I-V(2)) used in trap characterization are reviewed.

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