Design and performance of wideband, low-noise, millimeter-wave amplifiers for microwave anisotropy probe radiometers
暂无分享,去创建一个
M. Lui | E.J. Wollack | M.W. Pospieszalski | N. Bailey | D. Thacker | J. Webber | L.D. Nguyen | M. Le
[1] Takyiu Liu,et al. Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.
[2] E. Wollack,et al. Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.
[3] M. Pospieszalski,et al. Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
[4] M. Pospieszalski. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .
[5] M. W. Pospieszalski,et al. Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
[6] R. Lai,et al. W-band InP wideband MMIC LNA with 30 K noise temperature , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[7] Edward J. Wollack,et al. Characteristics of broadband InP HFET millimeter-wave amplifiers and their applications in radioastronomy receivers , 1997, 1997 Topical Symposium on Millimeter Waves. Proceedings (Cat. No.97TH8274).
[8] E.J. Wollack,et al. Characteristics of broadband InP millimeter-wave amplifiers for radiometry , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).