论文信息 - A two-terminal nanocrystalline silicon memory device at room temperature

A two-terminal nanocrystalline silicon memory device at room temperature

We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.

[1] Stephen Y. Chou,et al. A Silicon Single-Electron Transistor Memory Operating at Room Temperature , 1997, Science.

[2] Sandip Tiwari,et al. Single charge and confinement effects in nano-crystal memories , 1996 .

[3] Hu,et al. Hysteretic voltage gap of a multijunction trap. , 1996, Physical review. B, Condensed matter.

[4] David J. Smith,et al. Cross-sectional transmission electron microscopy of Si-based nanostructures , 1996 .

[5] Kazuo Yano,et al. Transport characteristics of polycrystalline‐silicon wire influenced by single‐electron charging at room temperature , 1995 .

[6] Exact solution of the electrostatic problem for a single electron multijunction trap. , 1995, Physical review letters.

[7] Kazuo Yano,et al. Room-temperature single-electron memory , 1994 .

[8] Han,et al. Measurement of single electron lifetimes in a multijunction trap. , 1994, Physical review letters.

[9] Middleton,et al. Collective transport in arrays of small metallic dots. , 1993, Physical review letters.

[10] Kazuo Nakazato,et al. Single-electron memory , 1993 .

[11] M. Tinkham,et al. Variation of the Coulomb staircase in a two-junction system by fractional electron charge. , 1991, Physical review. B, Condensed matter.

[12] Mullen,et al. I-V characteristics of coupled ultrasmall-capacitance normal tunnel junctions. , 1988, Physical review. B, Condensed matter.