An Integrated Double-Scroll Circuit Using Floating-Gate MOSFETs

This paper proposes an efficient technique for an integrated double-scroll circuit. The proposed circuit utilizes a high-Q MOS active inductor. Moreover, a negative conductance in the circuit is constituted with floating-gate MOSFETs. The characteristics of the double-scroll circuit can be altered by external control voltages, so that various chaotic dynamics can be easily obtained. The circuit is small, fast and compatible to a standard CMOS semiconductor process. The proposed circuit is designed and laid out with MOSIS TSMC 0.35 μm process. HSPICE circuit simulation results with extracted data from the layout are shown.

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