A systematic approach for analyzing and optimizing cell-internal signal electromigration

Electromigration (EM) in on-chip metal interconnects is a critical reliability failure mechanism in nanometer-scale technologies. This work addresses the problem of EM on signal interconnects within a standard cell. An approach for modeling and efficient characterization of cell-internal EM is developed, incorporating Joule heating effects, and is used to analyze the lifetime of large benchmark circuits. Further, a method for optimizing the circuit lifetime using minor layout modifications is proposed.

[1]  Ki-Don Lee.  Electromigration recovery and short lead effect under bipolar- and unipolar-pulse current , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[2]  C.-K. Hu,et al.  Impact of Cu microstructure on electromigration reliability , 2007, 2007 IEEE International Interconnect Technology Conferencee.

[3]  J. Black,et al.  Electromigration—A brief survey and some recent results , 1969 .

[4]  Srikanth Krishnan,et al.  New electromigration validation: Via Node Vector Method , 2010, 2010 IEEE International Reliability Physics Symposium.

[5]  K. Banerjee,et al.  Global (interconnect) warming , 2001 .

[6]  Palkesh Jain,et al.  Accurate Current Estimation for Interconnect Reliability Analysis , 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[7]  Jens Lienig,et al.  Electromigration and its impact on physical design in future technologies , 2013, ISPD '13.