Spin‐dependent recombination in irradiated Si/SiO2 device structures

We report studies of spin‐dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p‐channel metal‐oxide‐silicon field‐effect transistors and metal‐oxide‐silicon wafers. Electron spin resonance transitions on the Pb center increase the recombination current at the Si/SiO2 interface by 2–3 parts in 104. The results are interpreted using a model involving the recombination of electrons and holes at Pb centers with which they are spatially correlated.

[1]  E. Poindexter,et al.  Optical enhancement of the electron paramagnetic resonance signal from SiIII centers at the Si/SiO2 interface , 1981 .

[2]  Bruce E. Deal,et al.  Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .

[3]  L. Kimerling,et al.  The optically detected magnetic resonance of dangling bonds at the Si/SiO2 interface , 1986 .

[4]  J. Ballantyne.  Effect of Phonon Energy Loss on Photoemissive Yield near Threshold , 1972 .

[5]  Y. Nishi.  Electron Spin Resonance in SiO2 Grown on Silicon , 1966 .

[6]  Max J. Schulz,et al.  Insulating Films on Semiconductors , 1981 .

[7]  A. F. Barabanov,et al.  Influence of the electron damping on the properties of intermediate valence systems , 1976 .

[8]  Ian W. Boyd,et al.  A study of thin silicon dioxide films using infrared absorption techniques , 1982 .

[9]  D. Biegelsen,et al.  Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution , 1984 .

[10]  B. Henderson,et al.  Optically induced electron spin resonance and spin‐dependent recombination in Si/SiO2 , 1984 .

[11]  K. L. Brower.  29Si hyperfine structure of unpaired spins at the Si/SiO2 interface , 1983 .

[12]  G. Sigel,et al.  Radiation-Induced Defect Centers in Thermally Grown Oxide Films , 1975, IEEE Transactions on Nuclear Science.

[13]  I. Solomon,et al.  Explanation of the large spin-dependent recombination effect in semiconductors , 1978 .

[14]  W. C. Johnson,et al.  Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures , 1981, IEEE Transactions on Nuclear Science.

[15]  Michael Pepper,et al.  Spin dependent surface recombination in silicon p-n junctions: The effect of irradiation , 1980 .

[16]  D. Lepine,et al.  Spin-Dependent Recombination on Silicon Surface , 1972 .

[17]  Patrick M. Lenahan,et al.  An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface , 1983 .