AlGaInN-based ultraviolet light-emitting diodes grown on Si 111

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×1017 cm−3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm.

[1]  Masahiko Sano,et al.  InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices , 1997 .

[2]  Naoki Kobayashi,et al.  Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN , 2001 .

[3]  M. Shur,et al.  Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells , 2001 .

[4]  J. W. Graff,et al.  Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices , 2001 .

[5]  Tsunemasa Taguchi,et al.  High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy , 2001 .

[6]  H. Hirayama,et al.  Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers , 2000 .

[7]  W. Richter,et al.  Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices , 1999 .

[8]  Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices , 1999 .

[9]  Umesh K. Mishra,et al.  ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES , 1999 .

[10]  W. Grieshaber,et al.  Enhancement of deep acceptor activation in semiconductors by superlattice doping , 1996 .

[11]  Henryk Temkin,et al.  Growth of AlGaN on Si(111) by gas source molecular beam epitaxy , 2000 .

[12]  Tsuneo Suzuki,et al.  Pulsed Power Technology and Its Applications at Extreme Energy-Density Research Institute (EDI), Nagaoka , 2001 .

[13]  R. Nötzel,et al.  Novel semiconductor nanostructures by functional self-organized epitaxy , 2001 .

[14]  Henryk Temkin,et al.  HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA , 1999 .

[15]  Naoki Kobayashi,et al.  Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region , 2001 .