Electrically pumped GaAsBi laser diodes

In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 µm at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm−1. The characteristic temperature is 79 K in the temperature range of 225–350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 – 350 K, much smaller than 0.35 – 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.