论文信息 - InAs∕AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications - 字舞流文

InAs∕AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications

J. B. Boos | B. R. Bennett | W. Deal | M. Goorsky | A. Noori | S. Hayashi | R. Tsai | A. Gutierrez-Aitken | L. J. Lee | P. Nam | M. Lange | R. Sandhu | R. Hsing | B. Poust | J. Kraus