Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: technique and applications.

We report on a new technique of realizing photoreflectance (PR) spectroscopy with a step-scan Fourier-transform infrared spectrometer. The experimental configuration is briefly described and a detailed theoretical analysis is conducted. The results reveal two distinct features of this PR technique that (i) the PR related signal is enhanced by a factor of at least 100 relative to those of the conventional PR techniques and (ii) the unwanted spurious signal introduced by either diffuse reflected pump beam or pump-beam induced material's photoluminescence reaching the photodetector of the PR configuration is eliminated without any special consideration of normalization for deducing the final PR spectrum. Applications are given as examples in the study of GaNAs/GaAs single quantum wells and GaInP/AlGaInP multiple quantum wells, respectively, under different pump-beam excitation energy and/or power. The experimental results approve the theoretically predicted features and illustrate the possibility of investigating weak PR features by using high pump-beam power. A brief comparison of this technique with the conventional PR techniques is given, and the extendibility of this technique to long-wavelength spectral regions is pointed out.

[1]  H. Shen,et al.  New normalization procedure for modulation spectroscopy , 1987 .

[2]  J. Chu,et al.  Ordering effects on optical transitions in Ga x In 1 − x P / ( Al 0.66 Ga 0.34 ) y In 1 − y P quantum wells studied by photoluminescence and reflectivity spectroscopy , 2003 .

[3]  J. Shao,et al.  Ordering parameter and band-offset determination for ordered Ga x In 1 − x P / ( Al 0.66 Ga 0.34 ) y In 1 − y P quantum wells , 2002 .

[4]  Brian C. Smith Fundamentals of Fourier Transform Infrared Spectroscopy , 1995 .

[5]  Baoquan Sun,et al.  Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots , 1998 .

[6]  V. Härle,et al.  Forbidden transitions and the effective masses of electrons and holes in In1−xGaxAs/InP quantum wells with compressive strain , 2003 .

[7]  Analysis of strained InGaAs/InGaAsP single quantum wells using room temperature photoreflectance , 1998 .

[8]  T. W. Haas,et al.  Photoreflectance of AlxGa1−xAs and AlxGa1−xAs/GaAs interfaces and high‐electron‐mobility transistors , 1990 .

[9]  J. Chu,et al.  Photoluminescence and absorption identification of Ti3+ in zinc telluride , 2002 .

[10]  Jun Wu,et al.  Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors , 2006 .

[11]  J. Plaza,et al.  Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys , 2005 .

[12]  T. E. Sale,et al.  Photomodulated reflectance study of In x Ga 1-x As/GaAs/AlAs microcavity vertical-cavity surface emitting laser structures in the weak-coupling regime: The cavity/ground-state-exciton resonance , 1999 .

[13]  Shaoling Guo,et al.  Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer , 2006 .

[14]  M. Dutta,et al.  Sweeping photoreflectance spectroscopy of semiconductors , 1990 .

[15]  Richard J. Potter,et al.  Optical properties of GaNAs and GaInAsN quantum wells , 2004 .

[16]  V. Härle,et al.  Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy , 2000 .

[17]  Mattias Hammar,et al.  Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells , 2004 .

[18]  J. Chu,et al.  Magnetophotoluminescence study of GaxIn1−xP quantum wells with CuPt-type long-range ordering , 2006 .

[19]  S. Koch,et al.  Type I-type II transition in InGaAs–GaNAs heterostructures , 2005 .

[20]  W. Lu,et al.  Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer , 2006 .

[21]  F. Pollak,et al.  A new offset technique for suppression of spurious signals in photoreflectance spectra , 1994 .

[22]  A. Larsson,et al.  High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy , 2005 .

[23]  Bajaj,et al.  Excitonic transitions in GaAs/GaxAl1-xAs quantum wells observed by photoreflectance spectroscopy: Comparison with a first-principles theory. , 1988, Physical review. B, Condensed matter.

[24]  Fred H. Pollak,et al.  Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices , 1993 .

[25]  Shen,et al.  Photoreflectance study of narrow-well strained-layer InxGa1-xAs/GaAs coupled multiple-quantum-well structures. , 1988, Physical review. B, Condensed matter.

[26]  M. Missous,et al.  Infrared photoreflectance of InAs , 1997 .

[27]  Hongen Shen,et al.  Franz–Keldysh oscillations in modulation spectroscopy , 1995 .

[28]  S. R. Chinn,et al.  Photoluminescence of infrared‐sensing materials using an FTIR spectrometer , 1989 .