论文信息 - The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique

The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique

Abstract An automated SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique is developed. This system can perform interface-trap density (Dit) energy distribution measurements directly on n- and p-channel submicrometer MOSFETs without requiring complex transient recombination modeling. It is demonstrated that the staircase charge-pumping technique is capable of characterizing interface-trap densities as low as 109 cm−2 eV−1 as well as detecting trap states within 50 meV of the conduction-band edge. The technique is also sensitive to recombination time constants (τ) ranging over four orders of magnitude. In this study, experimental evidence is presented confirming several significant assumptions used in the staircase charge-pumping technique. Verification is provided of the establishment of quasi-equilibrium, the independence between trapping and detrapping processes, and the justification of neglecting edge effects and parasitic current components. Criteria are presented outlining the regions of validity for utilizing staircase charge pumping. Applications in the monitoring of oxide degradation due to Fowler-Nordheim tunneling and hot-electron injection are demonstrated.

Richard S. Muller | James E. Chung

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