In recent years, the need for semiconductor pressure transducers that can be used in applications that require operation in harsh environments that are corrosive, oxidizing, experiencing high vibration, and involving high temperatures has increased. Accordingly, not only must the stress-sensing network of these transducers be protected from these harsh environmental conditions in some way to enable the transducer to remain operational at high temperature over extended period of time, but the entire transducer structure, including: electrical contacts, lead-outs, interconnects and external wiring must also be protected. Results are presented showing test data for latest high temperature “leadless” dielectrically isolated (SOI) semiconductor piezoresistive transducers. Data is presented at temperatures for up to 1075°F illustrating the excellent zero shift and low span sensitivity to temperature. Methods of construction of these devices are also discussed. The results indicate that ruggedized, high frequency, piezoresistive transducers are now feasible and can be manufactured for the kinds of environments that exist under the most stressful jet engine conditions.
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