1 GHz GaInAs:Fe photoconductive optical AND gate with approximately 100 fJ switching energy for time-division access fibre networks

A high-speed, three-port optical AND gate based on GaInAs:Fe photoconductive switches operating at λ = 1.3 μm is demonstrated. An electrical power contrast ratio of 12 dB is obtained in optical-to-electrical time-division demultiplexing of a 1 GHz signal bit sequence by a 333.3 MHz clock with optical pulse energies of 100 fJ.