论文信息 - High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum - 字舞流文

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

N. Motta | K. Ostrikov | J. Bradford | M. Tomellini | J. Macleod | J. Lipton‐Duffin | Negar Zebardastan