Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub 2//Si structure and an Al/SiO/sub 2//n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.

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