Analysis on GC SOI MOSFET analog parameters at high temperatures

This paper presents a comparative analysis of the behavior in high temperature operation (up to 300 °C) of Graded-Channel and conventional fully depleted SOI MOSFET. The g m /I DS ratio, Early voltage, multiplication factor, parasitic bipolar transistor gain, and breakdown voltage are obtained experimentally and through two-dimensional numerical simulations. It was verified that due to the increase of the Early voltage obtained in GC devices, the low-frequency open-loop gain (A v ) is significantly larger than the conventional SOI from room to high temperature. At high temperatures the breakdown voltage in the GC devices is also higher than in the conventional SOI.