Estimation of the TEOS dissociation coefficient by electron impact

SiO2-like films are deposited in a low-pressure rf helicon reactor using oxygen-rich O2/TEOS (tetraethoxysilane) mixtures. A model based on the deposition rate variation with the distance to the TEOS injection is used to estimate the TEOS electron-impact dissociation coefficient ke and the effective sticking coefficient of reactive fragments s. In the helicon diffusion chamber where the electron temperature and density are about 4 eV and 1010 cm−3, respectively, ke and s are found to be 1.82×10−7 cm3 s−1 and 0.035, respectively. Under these low-pressure plasma conditions, the TEOS dissociation by electron impact is dominant over dissociation by oxygen atoms.

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