Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers

We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component.

[1]  Mindaugas Radziunas,et al.  Intrinsic beam shaping mechanism in spatially modulated broad area semiconductor amplifiers , 2013 .

[2]  K. Paschke,et al.  Beam Properties of 980-nm Tapered Lasers With Separate Contacts: Experiments and Simulations , 2009, IEEE Journal of Quantum Electronics.

[3]  M. S. Miguel,et al.  Mode control and pattern stabilization in broad-area lasers by optical feedback. , 1996, Physical review. A, Atomic, molecular, and optical physics.

[4]  R. Poprawe,et al.  Manufacturing with novel high-power diode lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[5]  Karl Joachim Ebeling,et al.  Numerical simulation of broad-area high-power semiconductor laser amplifiers , 1997 .

[6]  A. G. Vladimirov,et al.  Theoretical Investigation of Striped and Non-Striped Broad Area Lasers With Off-Axis Feedback , 2012, IEEE Journal of Quantum Electronics.

[7]  S. Muller,et al.  High-power near-diffraction-limited tapered amplifiers at 1064 nm for optical intersatellite communications , 1998, IEEE Photonics Technology Letters.

[8]  Mindaugas Radziunas,et al.  Impact of gain dispersion on the spatio-temporal dynamics of multisection lasers , 2001 .

[9]  Kestutis Staliunas,et al.  Spatial “rocking” in broad-area semiconductor lasers , 2011 .

[10]  Amnon Yariv,et al.  Transverse Bragg resonance laser amplifier. , 2003, Optics letters.

[12]  Stephan W Koch,et al.  Filamentation and beam propagation in broad-area semiconductor lasers , 1995 .

[13]  K Staliunas,et al.  Suppression of modulation instability in broad area semiconductor amplifiers. , 2014, Optics letters.

[14]  J. A. Fleck,et al.  Emission of Pulse Trains byQ-Switched Lasers , 1968 .

[15]  H. Wenzel,et al.  Measurement and Simulation of Distributed-Feedback Tapered Master-Oscillator Power Amplifiers , 2009, IEEE Journal of Quantum Electronics.

[16]  Jerome V Moloney,et al.  Spatiotemporal chaos in broad-area semiconductor lasers , 1993 .

[17]  Hannu Tenhunen,et al.  Modelling noise and delay in VLSI circuits , 2003 .

[18]  C. Chen,et al.  Stabilization of lateral mode transients in high-power broad area semiconductor lasers , 2009 .

[19]  Katrin Paschke,et al.  600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO3 bulk crystal. , 2006, Optics letters.

[20]  K. Staliunas,et al.  Beam shaping in spatially modulated broad area semiconductor amplifiers , 2012, 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC.

[21]  J. Javaloyes,et al.  Spectral Delay Algebraic Equation Approach to Broad Area Laser Diodes , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[22]  M. Pessa,et al.  State-of-the-art aluminum-free 980-nm laser diodes , 1996 .

[23]  G. R. Hadley,et al.  Modeling of injection-locking phenomena in diode-laser arrays. , 1986, Optics letters.

[24]  Ivo Montrosset,et al.  Dynamic beam propagation method for flared semiconductor power amplifiers , 1996 .