论文信息 - Semiconducting Properties of InSb–InAs Alloys

Semiconducting Properties of InSb–InAs Alloys

Hall coefficient and conductivity of InSb–InAs alloys have been measured from approximately 300° to 700°K. The 0°K energy gaps determined from the intrinsic carrier concentrations were found to reach a minimum of 0.195 eV at 90 mole % InSb. The electron mobilities were found to vary significantly from sample to sample and are interpreted as arising from ionized impurity plus inhomogeneity scattering.

L. Ekstrom | I. Kudman

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