A Si Power MOS Amplifier for PCN Mobile Telephones

A 1.8-GHz-band Si power MOS hybrid IC (module) with 42% overall efficiency, 2-W output power, and 26-dB power gain at a 4.8-V supply voltage has been developed for high-power amplifiers of PCN cellular telephones. New parallel operation using impedance-matching circuit enables this high efficiency and power module at high frequency and low supply voltage, which uses 0.7 ¿m-gate-length and 16-mm-gate-width power MOSFETs.