A Si Power MOS Amplifier for PCN Mobile Telephones
暂无分享,去创建一个
A 1.8-GHz-band Si power MOS hybrid IC (module) with 42% overall efficiency, 2-W output power, and 26-dB power gain at a 4.8-V supply voltage has been developed for high-power amplifiers of PCN cellular telephones. New parallel operation using impedance-matching circuit enables this high efficiency and power module at high frequency and low supply voltage, which uses 0.7 ¿m-gate-length and 16-mm-gate-width power MOSFETs.
[1] T. Okabe,et al. Radio-frequency MOS power module , 1993 .
[2] Mineo Katsueda,et al. Highly efficient 1.5GHz si power MOSFET for digital cellular front end , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.