论文信息 - Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit

Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit

An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance. It is clearly indicated which elements are uniquely determined, and which elements are estimated. >

[1] Rakesh Chadha,et al. Computer Aided Design of Microwave Circuits , 1978 .

[2] Robert J. Trew,et al. A parameter extraction technique for heterojunction bipolar transistors , 1989, IEEE MTT-S International Microwave Symposium Digest.

[3] James S. Harris,et al. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit , 1991 .

[4] Dimitris Pavlidis,et al. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data , 1992 .

[5] P. Smith,et al. Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistors , 1994 .

[6] P. R. Smith,et al. A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor , 1992, 1992 International Technical Digest on Electron Devices Meeting.