Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP

The lateral oxidation kinetics of AlAs0.56Sb0.44 on InP substrates have been investigated to understand the antimony segregation process during oxidation. Oxidation layers were grown between GaAsSb buffer and cap layers on InP substrates by molecular beam epitaxy. Oxidation temperatures between 325 and 500 °C were investigated for AlAsSb layer thicknesses between 100 and 2000 A. At low oxidation temperatures (Tox⩽400 °C), the process is reaction limited with a linear dependence of oxidation depth on time. At intermediate oxidation temperatures (400<Tox<450 °C), the oxidation process becomes diffusion limited. At high oxidation temperatures, the oxidation process is termed self-limiting since at 500 °C the process stops entirely after oxidation times on the order of 5 min and distances of 40 μm. It is shown that the antimony float layer lags the oxidation front by a temperature-dependent distance, which suggests that the antimony may change the structure of the oxide at the front and cause self-limiting be...

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