Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p+n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears be...

[1]  M. Kaniewska,et al.  Deep levels induced by InAs/GaAs quantum dots , 2006 .

[2]  Huber,et al.  Identification of a defect in a semiconductor: EL2 in GaAs. , 1986, Physical review. B, Condensed matter.

[3]  S. Hubbard,et al.  Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix , 2014 .

[4]  J. Chi,et al.  Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling , 2005 .

[5]  David V. Forbes,et al.  Strain Effects on Radiation Tolerance of Triple-Junction Solar Cells With InAs Quantum Dots in the GaAs Junction , 2014, IEEE Journal of Photovoltaics.

[6]  M. Matyáš Deep levels and processes in the course of degradation of GaP:N LED's , 1986 .

[7]  S. Niki,et al.  Multi-stacked quantum dot solar cells fabricated by intermittent deposition of InGaAs , 2011 .

[8]  Christopher G. Bailey,et al.  Effect of strain compensation on quantum dot enhanced GaAs solar cells , 2008 .

[9]  S. Messenger,et al.  Displacement Damage Evolution in GaAs Following Electron, Proton and Silicon Ion Irradiation , 2007, IEEE Transactions on Nuclear Science.

[10]  L. Samuelson,et al.  ELECTRICAL CHARACTERIZATION OF INP/GAINP QUANTUM DOTS BY SPACE CHARGE SPECTROSCOPY , 1998 .

[11]  Sang Jun Lee,et al.  Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements , 2009 .

[12]  A. Madhukar,et al.  Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices , 2010 .

[13]  O. Tretyak,et al.  Deep level transient spectroscopy characterization of InAs self-assembled quantum dots , 2001 .

[14]  N. T. Moshegov,et al.  Capacitance spectroscopy of InAs self-assembled quantum dots embedded in a GaAs/AlAs superlattice , 2000 .

[15]  Christopher G. Bailey,et al.  Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage , 2011, IEEE Journal of Photovoltaics.

[16]  Miyoko O. Watanabe,et al.  On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy , 1982 .

[17]  R. Raffaelle,et al.  Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells , 2011 .

[18]  A. Strittmatter,et al.  230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier , 2015 .

[19]  Huiyun Liu,et al.  Defect mediated extraction in InAs/GaAs quantum dot solar cells , 2012 .

[20]  S. Khanna,et al.  Radiation induced carrier enhancement and intrinsic defect transformation in n‐GaAs , 1993 .

[21]  R. Loo,et al.  Deep-level defects and numerical simulation of radiation damage in GaAs solar cells , 1991 .

[22]  W. Schairer Defect centers and degradation of GaP:N LED's , 1979 .

[23]  C. Moon,et al.  Spatial resolution of capacitance-voltage profiles in quantum well structures , 1998 .

[24]  G. Bondarenko,et al.  Models of deep centres in gallium phosphide , 1996 .

[25]  R. Kassing,et al.  Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties , 1988 .

[26]  Sumio Matsuda,et al.  Proton radiation analysis of multi-junction space solar cells , 2003 .

[27]  Robert J. Walters,et al.  Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .

[28]  Robert J. Walters,et al.  Proton nonionizing energy loss (NIEL) for device applications , 2003 .

[29]  Dieter Bimberg,et al.  ELECTRON ESCAPE FROM INAS QUANTUM DOTS , 1999 .

[30]  J. Bourgoin,et al.  Irradiation-induced defects in GaAs , 1985 .

[31]  D. Bimberg,et al.  Radiation hardness of InGaAs/GaAs quantum dots , 2003 .

[32]  Christopher G. Bailey,et al.  Effect of vicinal substrates on the growth and device performance of quantum dot solar cells , 2013 .

[33]  T. Ohshima,et al.  Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation , 2013 .

[34]  F. Eisen,et al.  Ion irradiation damage in n‐type GaAs in comparison with its electron irradiation damage , 1992 .

[35]  A. Houdayer,et al.  High-energy proton irradiation effects in GaAs devices , 2004, IEEE Transactions on Nuclear Science.

[36]  Yu. G. Musikhin,et al.  Electronic structure of self-assembled InAs quantum dots in GaAs matrix , 1998 .

[37]  Bourgoin,et al.  Behavior of electron-irradiation-induced defects in GaAs. , 1990, Physical review. B, Condensed matter.