Laser ablation of aluminum oxide and silicon nitride rear-side passivation for i-PERC cell
暂无分享,去创建一个
[1] Wmm Erwin Kessels,et al. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 , 2006 .
[2] G. Schubert,et al. Al–Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells , 2010 .
[3] Wmm Erwin Kessels,et al. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells , 2012 .
[4] Wmm Erwin Kessels,et al. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3 , 2008 .
[5] S. Peters,et al. High-Efficiency Industrial-Type PERC Solar Cells Applying ICP AlOx as Rear Passivation Layer , 2012 .
[6] M. Green,et al. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates , 1999 .
[7] Gunnar Schubert,et al. Distribution of Silicon in the Aluminum Matrix for Rear Passivated Solar Cells , 2011 .
[8] Oliver Doll,et al. Differences of Rear-Contact Area Formation between Laser Ablation and Etching Paste for PERC Solar Cells , 2011 .
[9] Dongseop Kim,et al. Highly efficient PERC cells fabricated using the low cost laser ablation process , 2013 .
[10] Wmm Erwin Kessels,et al. Silicon surface passivation by atomic layer deposited Al2O3 , 2008 .
[11] Mustapha Lemiti,et al. Characterization of laser-induced damage in silicon solar cells during selective ablation processes , 2013 .
[12] H. Khatri,et al. Rear Passivated High Efficiency Solar Cells: Optimization of Aluminum Alloying in Local Contacts by Modifying Paste Formulation , 2012 .