Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

We have investigated an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells. In the TWL the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer and the emission wavelength is defined by the combined cavity mode preferably by a single dominating mode. The TWL wafer has been grown by metal-organic chemical vapour deposition. Laser parameters have been investigated both in pulsed and CW mode in the temperature range of 15–60 °C. In the temperature window of 20–50 °C under CW excitation the lasers have shown high wavelength temperature stability with the temperature shift of 0.05 nm K−1 and threshold current stability with the characteristic temperature of 500 K. The data obtained prove the concept of thermal stability in tilted wave lasers.