Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Data are presented to quantify the effect of the conduction band energy barrier (ΔEC,B) in the base region of the transistor laser on the minority carrier transport dynamics, recombination lifetime in the base region, and frequency response of the device. A greater ΔEC,B results in lower transistor current gain (β) and higher optical output power, indicating increased carrier confinement and recombination in the base. For a device with ΔEC,B = 41 meV, the measured bias-dependent optical frequency response and subsequent data fitting yield a short recombination lifetime of 30 ps in the base and a small resonance peak of 1.5 dB. A device with ΔEC,B = 82 meV exhibits a longer recombination lifetime of 70 ps and a larger resonance peak of 4 dB.

[1]  Milton Feng,et al.  Relative intensity noise of a quantum well transistor laser , 2012 .

[2]  N. Holonyak,et al.  Selective oxidization cavity confinement for low threshold vertical cavity transistor laser , 2013 .

[3]  David F. Welch,et al.  Single-mode InGaAs-GaAs laser diodes operating at 980 nm , 1991 .

[4]  J. Bardeen,et al.  The transistor, a semi-conductor triode , 1948 .

[5]  Milton Feng,et al.  Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation , 2011 .

[6]  A. R. Sugg,et al.  Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .

[7]  Milton Feng,et al.  Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature , 2013, IEEE Photonics Technology Letters.

[8]  Milton Feng,et al.  Laser operation of a heterojunction bipolar light-emitting transistor , 2004 .

[9]  N. Holonyak,et al.  Bandfilling and photon-assisted tunneling in a quantum-well transistor laser , 2011 .

[10]  Milton Feng,et al.  Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser , 2006 .

[11]  T. Ishibashi,et al.  High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector current blocking , 1993 .

[12]  Milton Feng,et al.  Signal mixing in a multiple input transistor laser near threshold , 2006 .

[13]  Van de Walle Cg.  Band lineups and deformation potentials in the model-solid theory. , 1989 .

[14]  Milton Feng,et al.  Quantum-well-base heterojunction bipolar light-emitting transistor , 2004 .

[15]  Milton Feng,et al.  Room temperature continuous wave operation of a heterojunction bipolar transistor laser , 2005 .