Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
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Daisuke Ando | Yi Shuang | Yuji Sutou | Junichi Koike | Satoshi Shindo | D. Ando | Y. Sutou | J. Koike | Yunheub Song | Shogo Hatayama | Yi Shuang | S. Hatayama | S. Shindo | Y. Song
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