Size effects on polar optical phonon scattering of 1-D and 2-D electron gas in synthetic semiconductors

The total scattering rate and the transition probability for electron‐phonon interaction in 1‐D and 2‐D semiconductor materials are calculated in taking into account the finite dimensions of the structure. Although noticeable, size effects on the scattering rate are generally small, with more pronounced features for 1‐D structures than for 2‐D structures. For 2‐D layers, our theory agrees with recent experimental results whereas it contradicts the previous theory predicting large size effects and mass‐independent electron‐phonon scattering rates. In 1‐D structures singularities in the phonon emission rate appear as a natural consequence of the 1‐D density of states. However, for high energy the 1‐D emission rate is found smaller than the corresponding 3‐D rate. An additional consequence of the confinement is the quenching of the phonon absorption rate.

[1]  V. Arora.  Quantum size effect in thin-wire transport , 1981 .

[2]  N. Holonyak,et al.  Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures , 1980 .

[3]  A. Yariv,et al.  Intrinsic Limitations on the High Speed Performance of High Electron Mobility Transistors , 1983 .

[4]  B. Ridley.  The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structures , 1982 .

[5]  R. A. Logan,et al.  Toward quantum well wires: Fabrication and optical properties , 1982 .

[6]  P. J. Price,et al.  Two-dimensional electron transport in semiconductor layers. I. Phonon scattering , 1981 .

[7]  K. Hess.  Impurity and phonon scattering in layered structures , 1979 .

[8]  A. Gossard,et al.  Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration , 1981 .

[9]  Johnson Lee,et al.  Impurity‐limited mobility of semiconducting thin wire , 1983 .

[10]  P. K. Basu,et al.  Polar optic phonon scattering of two dimensional electron gas in a rectangular potential well , 1981 .

[11]  A. Gossard,et al.  Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures , 1983 .

[12]  Hiroyuki Sakaki,et al.  Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures , 1980 .

[13]  H. Fröhlich.  Energy distribution and stability of electrons in electric fields , 1947, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[14]  R. Feynman.  Statistical Mechanics, A Set of Lectures , 1972 .

[15]  A. Hartstein,et al.  Conductance in Restricted-Dimensionality Accumulation Layers , 1982 .

[16]  R. Howard,et al.  One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers , 1982 .