Radiation effects in new materials for nano-devices
暂无分享,去创建一个
M. L. Alles | Ronald D. Schrimpf | Daniel M. Fleetwood | Robert A. Reed | Gerald Lucovsky | Sokrates T. Pantelides | peixiong zhao | R. Reed | M. Alles | D. Fleetwood | G. Lucovsky | S. Pantelides
[1] Brian J Landi,et al. Radiation Effects in Single-Walled Carbon Nanotube Thin-Film-Transistors , 2010, IEEE Transactions on Nuclear Science.
[2] En Xia Zhang,et al. Layout-Related Stress Effects on Radiation-Induced Leakage Current , 2010, IEEE Transactions on Nuclear Science.
[3] R. Reed,et al. Dose Enhancement and Reduction in SiO $_{2}$ and High- $\kappa$ MOS Insulators , 2010 .
[4] En Xia Zhang,et al. Total-ionizing-dose radiation response of partially-depleted SOI devices , 2010, 2010 IEEE International SOI Conference (SOI).
[5] D. R. Ball,et al. Design and evaluation of SOI devices for radiation environments , 2010, 2010 IEEE International SOI Conference (SOI).
[6] C. Capasso,et al. Total dose radiation response of a 45nm SOI Technology , 2010, 2010 IEEE International SOI Conference (SOI).
[7] S. Messenger,et al. Radiation effects in single-walled carbon nanotube papers , 2010 .
[8] Cor Claeys,et al. Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs , 2009, IEEE Transactions on Nuclear Science.
[9] peixiong zhao,et al. Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions , 2009, IEEE Transactions on Nuclear Science.
[10] M.D. Berg,et al. Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM , 2009, IEEE Transactions on Nuclear Science.
[11] peixiong zhao,et al. Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides , 2009, IEEE Transactions on Nuclear Science.
[12] B. Narasimham,et al. Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process , 2009, IEEE Transactions on Nuclear Science.
[13] W. Kang,et al. A monolithic nanodiamond lateral field emission triode , 2009 .
[14] Gate bias dependence of single event charge collection in AlSb/InAs HEMTs , 2009, 2009 European Conference on Radiation and Its Effects on Components and Systems.
[15] W. Xiong,et al. Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs , 2009, IEEE Transactions on Nuclear Science.
[16] R. Reed,et al. Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure , 2009, IEEE Transactions on Nuclear Science.
[17] peixiong zhao,et al. Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio , 2009, IEEE Transactions on Nuclear Science.
[18] S. Cristoloveanu,et al. Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices , 2008, IEEE Transactions on Nuclear Science.
[19] P. Oldiges,et al. Design Implications of Single Event Transients in a Commercial 45 nm SOI Device Technology , 2008, IEEE Transactions on Nuclear Science.
[20] P. Marshall,et al. Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM , 2008, IEEE Transactions on Nuclear Science.
[21] L.W. Massengill,et al. Single-Event Transient Pulse Propagation in Digital CMOS , 2008, IEEE Transactions on Nuclear Science.
[22] R.A. Reed,et al. Scaling and soft errors: Moore of the same for SOI ? , 2008, 2008 IEEE International SOI Conference.
[23] G. Lucovsky,et al. Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors , 2007, IEEE Transactions on Nuclear Science.
[24] peixiong zhao,et al. Impact of Ion Energy and Species on Single Event Effects Analysis , 2007, IEEE Transactions on Nuclear Science.
[25] J.M. Hutson,et al. The Effects of Angle of Incidence and Temperature on Latchup in 65 nm Technology , 2007, IEEE Transactions on Nuclear Science.
[26] G. Bersuker,et al. Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs , 2007, IEEE Transactions on Nuclear Science.
[27] J. R. Srour,et al. A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices , 2006, IEEE Transactions on Nuclear Science.
[28] peixiong zhao,et al. Total Dose Radiation Response of Nitrided and Non-nitrided SiO$_{2}$/4H-SiC MOS Capacitors , 2006, IEEE Transactions on Nuclear Science.
[29] L. Tsetseris,et al. Effects of Switched-bias Annealing on Charge Trapping in HfO$_{2}$ Gate Dielectrics , 2006, IEEE Transactions on Nuclear Science.
[30] Leonard C. Feldman,et al. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances , 2006 .
[31] E. Gusev. Defects in High-k Gate Dielectric Stacks , 2006 .
[32] J.A. Felix,et al. Bias-temperature instabilities and radiation effects in MOS devices , 2005, IEEE Transactions on Nuclear Science.
[33] O. Faynot,et al. Total ionizing dose effects on deca-nanometer fully depleted SOI devices , 2005, IEEE Transactions on Nuclear Science.
[34] G. Ghibaudo,et al. Review on high-k dielectrics reliability issues , 2005, IEEE Transactions on Device and Materials Reliability.
[35] J.A. Felix,et al. Charge trapping and annealing in high-/spl kappa/ gate dielectrics , 2004, IEEE Transactions on Nuclear Science.
[36] K. Avery,et al. Heavy ion-induced digital single-event transients in deep submicron Processes , 2004, IEEE Transactions on Nuclear Science.
[37] P. Dodd,et al. Production and propagation of single-event transients in high-speed digital logic ICs , 2004, IEEE Transactions on Nuclear Science.
[38] M. Turowski,et al. Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides , 2004, IEEE Transactions on Nuclear Science.
[39] Ronald D. Schrimpf,et al. Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors , 2004 .
[40] Ronald D. Schrimpf,et al. Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics , 2004 .
[41] Ronald D. Schrimpf,et al. Interface trapping properties of nMOSFETs with Al 2 O 3 /SiO x N y /Si(100) gate dielectric stacks after exposure to ionizing radiation , 2004 .
[42] Daniel M. Fleetwood,et al. Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics , 2004, Microelectron. Reliab..
[43] O. Flament,et al. Bias dependence of FD transistor response to total dose irradiation , 2003 .
[44] E. P. Gusev,et al. Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks , 2003 .
[45] Lloyd W. Massengill,et al. Basic mechanisms and modeling of single-event upset in digital microelectronics , 2003 .
[46] P. Dodd,et al. Radiation effects in SOI technologies , 2003 .
[47] J. R. Srour,et al. Review of displacement damage effects in silicon devices , 2003 .
[48] K. A. LaBel,et al. Evidence for angular effects in proton-induced single-event upsets , 2002 .
[49] Ronald D. Schrimpf,et al. Total-dose radiation response of hafnium-silicate capacitors , 2002 .
[50] M. Melloch,et al. Status and prospects for SiC power MOSFETs , 2002 .
[51] peixiong zhao,et al. Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics , 2001 .
[52] J. L. Pelloie,et al. Worst-case bias during total dose irradiation of SOI transistors , 2000 .
[53] Olivier Faynot,et al. Total dose induced latch in short channel NMOS/SOI transistors , 1998 .
[54] V. Afanas’ev,et al. Intrinsic SiC/SiO2 Interface States , 1997 .
[55] Daniel M. Fleetwood,et al. Single event gate rupture in thin gate oxides , 1997 .
[56] J. Cooper. Critical material and processing issues of SiC electronic devices , 1997 .
[57] J. R. Brews,et al. (Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide , 1995 .
[58] S. T. Liu,et al. Radiation response of fully-depleted MOS transistors fabricated in SIMOX , 1994 .
[59] Kenneth F. Galloway,et al. A conceptual model of a single-event gate-rupture in power MOSFETs , 1993 .
[60] D. Fleetwood. 'Border traps' in MOS devices , 1992 .
[61] J. Colinge. Silicon-on-Insulator Technology: Materials to VLSI , 1991 .
[62] L.W. Massengill,et al. Single-event charge enhancement in SOI devices , 1990, IEEE Electron Device Letters.
[63] Scofield,et al. Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. , 1990, Physical review letters.
[64] John Y. Chen,et al. CMOS Devices and Technology for VLSI , 1990 .
[65] W. R. Eisenstadt,et al. CMOS VLSI single event transient characterization , 1989 .
[66] R. Koga,et al. The Effect of Elevated Temperature on Latchup and Bit Errors in CMOS Devices , 1986, IEEE Transactions on Nuclear Science.
[67] M. Shoga,et al. Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits , 1986, IEEE Transactions on Nuclear Science.
[68] L. W. Massengill,et al. Dose-Rate Upset Patterns in a 16K CMOS SRAM , 1986, IEEE Transactions on Nuclear Science.
[69] J. Tihanyi,et al. Properties of ESFI MOS transistors due to the floating substrate and the finite volume , 1974, IEEE Transactions on Electron Devices.