Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

[1]  A. Chevy,et al.  Growth of crystalline slabs of layered InSe by the Czochralski method , 1978 .

[2]  J. Brebner,et al.  Electrical resistivity and hall effect of single crystals of GaTe and GaSe , 1962 .

[3]  C. Hamaguchi,et al.  Transverse electroreflectance of GaSe at the fundamental absorption edge , 1975 .

[4]  R. Lieth,et al.  Structures and compounds in the system Ga1−xSex , 1972 .

[5]  L. Vasanelli,et al.  Electrical properties of GaSxSe(1−x) solid solutions , 1978 .

[6]  L. Vasanelli,et al.  Hall-mobility anisotropy in GaSe , 1978 .

[7]  F. Cerdeira,et al.  Splittings and correlations between the long-wavelength optical phonons in the layer compounds GaSe, GaTe, and GaSe 1-x Te x , 1977 .

[8]  H. Mizukami,et al.  Electroluminescence in Forward Biased GaSe-SnO2 Heterojunction , 1974 .

[9]  W. Klemm,et al.  Messungen an Gallium- und Indium-Verbindungen. X. Über die Chalkogenide von Gallium und Indium , 1934 .

[10]  L. Vasanelli,et al.  Electrical properties of GaTe grown by various methods , 1975 .

[11]  S. Mori,et al.  Electrical Properties of InSe , 1963 .

[12]  C. Tatsuyama,et al.  Electrical and Optical Properties of GaSe-SnO2 Heterojunctions , 1976 .

[13]  C. Hamaguchi,et al.  Electroabsorption and Electroluminescence of GaSe , 1975 .

[14]  Mickael Martin,et al.  Large InSe monocrystals grown from a non-stoichiometric melt , 1977 .

[15]  Ryuichi Mori,et al.  Phase Study on Binary System Ga-Se , 1974 .

[16]  B. Girault,et al.  Electrooptical properties of SnO2 spray–GaSe and SnO2 spray–GaTe heterojunctions , 1978 .

[17]  J. Voitchovsky,et al.  Raman scattering from GaSxSe1-x , 1974 .

[18]  J. J. Hopfdeld Fine structure in the optical absorption edge of anisotropic crystals , 1960 .

[19]  K. Maschke Influence of stacking disorder on the electronic properties of layered semiconductors , 1975 .

[20]  John Arents,et al.  Atomic Structure Calculations , 1964 .

[21]  Yoshiro Sasaki,et al.  Polytypes and Excitons in GaSe 1-x S x Mixed Crystals , 1980 .

[22]  L. Gouskov,et al.  Electrical properties of gatexSe1–x crystals , 1977 .

[23]  R. Fivaz,et al.  Mobility of Charge Carriers in Semiconducting Layer Structures , 1967 .

[24]  Y. Nishina,et al.  Exciton transitions from spin-orbit split off valence bands in layer compound InSe , 1980 .

[25]  P. Schmid,et al.  Electron–Lattice Interaction in Gallium Selenide , 1974 .

[26]  V. L. Cardetta,et al.  Melt growth of single crystal ingots of GaSe by Bridgman-Stockbarger's method , 1972 .

[27]  J. R. Dale Metallographic Examination of the Phase Diagram of the Gallium-Tellurium System , 1963, Nature.

[28]  A. Gouskov,et al.  Orientation of the basal plane of single crystals of GaSe grown by vertical Bridgman technique , 1977 .

[29]  A. Chevy,et al.  Crystal structure and interatomic distances in GaSe , 1975 .

[30]  S. Sugano,et al.  Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton Absorption , 1966 .