Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations

Abstract The overall quantum efficiency in surface plasmon (SP) enhanced Schottky barrier photodetectors is examined by considering both the external and internal yield. The external yield is considered through calculations of absorption and transmission of light in a configuration that allows reflectance minimization due to SP excitation. Following a Monte Carlo method, a procedure is presented to estimate the internal yield while taking into account the effect of elastic and inelastic scattering processes on excited carriers subsequent to photon absorption. The relative importance of internal photoemission and band-to-band contributions to the internal yield is highlighted along with the variation of the yield as a function of wavelength, metal thickness and other salient parameters of the detector.

[1]  K. Williams,et al.  Design considerations for high-current photodetectors , 1999 .

[2]  A. A. Studna,et al.  Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV , 1983 .

[3]  Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers , 1998 .

[4]  M. Unlu,et al.  100-GHz resonant cavity enhanced Schottky photodiodes , 1998, IEEE Photonics Technology Letters.

[5]  M. T. Emeny,et al.  Improved surface plasmon enhanced photodetection at an AuGaAs schottky junction using a novel molecular beam epitaxy grown Otto coupling structure , 1991 .

[6]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[7]  Yu. A. Goldberg,et al.  Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes , 1999 .

[8]  Azzouz Sellai,et al.  Analysis of surface plasmon polariton enhancement in photodetection by Al—GaAs Schottky diodes , 1993 .

[9]  R. Azzam,et al.  Ellipsometry and polarized light , 1977 .

[10]  S. Brueck,et al.  Enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma waves , 1985 .

[11]  Chien-Ping Lee,et al.  Design of a resonant-cavity-enhanced photodetector for high-speed applications , 1997 .

[12]  J. Chyi,et al.  Resonant cavity-enhanced (RCE) photodetectors , 1991 .

[13]  Albert Chin,et al.  Enhancement of quantum efficiency in thin photodiodes through absorptive resonance , 1991 .

[14]  D. Lynch,et al.  Handbook of Optical Constants of Solids , 1985 .