SOI and nanoscale MOSFETs

SOI may facilitate the fabrication of two attractive scalable MOSFET structures. Ultra-thin body FET has been demonstrated at 20 nm gate length, using low-barrier silicide S/D, with selectively deposited Ge raised S/D, on bulk substrate, or with Si-Ge channel. FinFET is a simple double gate FET with excellent performance and can be scaled to below 10 nm gate length-a candidate as the ultimate CMOS device. Adjusting the threshold voltage of a device with very thin body is challenging although several novel methods have been suggested.