论文信息 - Resistance decay after electromigration as the effect of mechanical stress relaxation - 字舞流文

Resistance decay after electromigration as the effect of mechanical stress relaxation

Abstract Resistance decay has been observed in Aluminum narrow lines when the high stressing current in electromigration tests is turned off. It has been interpreted as the consequence of the relaxation of electromigration-induced mechanical stress.

Andrea Scorzoni | G. L. Baldini | F. Tamarri

[1] A. Scorzoni,et al. Electromigration and Matthiessen's rule: Experiments on non-passivated Al-1%Si films , 1990 .

[2] M. Ohring. Electromigration Damage in Thin Films due to Grain Boundary Grooving Processes , 1971 .

[3] A. Scorzoni,et al. Interaction between electromigration and mechanical-stress-induced migration; New insights by a simple, wafer-level resistometric technique , 1991 .

[4] Conyers Herring,et al. Stress generation by electromigration , 1976 .

[5] J. A. Schwarz,et al. Temperature-ramp resistance analysis to characterize electromigration , 1983 .

[6] Gian Carlo Cardinali,et al. A resistometric method to characterize electromigration at the wafer level , 1990 .

[7] J. R. Lloyd,et al. Study of Electromigration-Induced Resistance and Resistance Decay in A1 Thin Film Conductors , 1987, 25th International Reliability Physics Symposium.

[8] A. Scorzoni,et al. Electromigration in thin-film interconnection lines: models, methods and results , 1991 .

[9] J. Lloyd,et al. The effect of high d.c. density stressing on pre-existing voids in thin gold films , 1979 .