RF solid-state vibrating transistors

This paper reviews our work on CMOS-integrated active MEMS resonators. Design, analysis and results are presented on CMOS-MEMS resonators fabricated at the Front-End-of-Line (FEOL) of a standard CMOS technology, realized without the need for any post-processing or packaging. Unreleased Resonant Body Transistors (RBTs) are driven capacitively to form longitudinal resonance confined by Acoustic Bragg Reflectors (ABRs), and sensed piezoresistively using an n-channel Field Effect Transistor (nFET). This first generation hybrid CMOS-MEMS RBTs consume footprints of 5μm×3μm, and operate above 11 GHz with quality factors (Q) of 24-30 and temperature stability <;3 ppm/K, matching well with theory. In addition, acoustic mode localization using features of standard CMOS technology is discussed. The active transduction mechanisms developed for CMOS-MEMS resonators can be extended to piezoelectric III-V semiconductors available in mm-wave ICs (MMICs). Our recent work on switchable MEMS-HEMT resonators in AlGaN/GaN is presented using a standard GaN MMIC platform, providing a means of realizing configurable high-Q MEMS resonators in MMICs for high frequency, high power applications.

[1]  T. E. Kazior,et al.  High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate , 2010, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[2]  Ali Adibi,et al.  High-Q micromechanical resonators in a two-dimensional phononic crystal slab , 2009 .

[3]  S. Bhave,et al.  The resonant body transistor. , 2010, Nano letters.

[4]  A. Partridge,et al.  MEMS Oscillators for High Volume Commercial Applications , 2007, TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.

[5]  L. Buchaillot,et al.  Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators , 2009 .

[6]  A. Grill.  Porous pSiCOH Ultralow-k Dielectrics for Chip Interconnects Prepared by PECVD , 2009 .

[7]  Roy H. Olsson,et al.  Microfabricated phononic crystal devices and applications , 2008 .

[8]  V. Kaajakari,et al.  Electrostatic transducers for micromechanical resonators: free space and solid dielectric , 2006, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[9]  Kuei-Ann Wen,et al.  A generalized foundry CMOS platform for capacitively-transduced resonators monolithically integrated with amplifiers , 2010, 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS).

[10]  H. Nathanson,et al.  The resonant gate transistor , 1967 .

[11]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[12]  W. E. Newell,et al.  Face-mounted piezoelectric resonators , 1965 .

[13]  W. Tanski.  Surface Acoustic Wave Resonators on Quartz , 1979, IEEE Transactions on Sonics and Ultrasonics.

[14]  D. Weinstein,et al.  Internal Dielectric Transduction in Bulk-Mode Resonators , 2009, Journal of Microelectromechanical Systems.

[15]  K. McStay,et al.  Scaling deep trench based eDRAM on SOI to 32nm and Beyond , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[16]  T. Gaylord,et al.  Theoretical Analysis of Subwavelength High Contrast Grating Reflectors References and Links , 2022 .

[17]  Clark T.-C. Nguyen,et al.  MEMS-based RF channel selection for true software-defined cognitive radio and low-power sensor communications , 2013, IEEE Communications Magazine.

[18]  GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection , 2011, 2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings.

[19]  K. J. Gabriel,et al.  Post-CMOS processing for high-aspect-ratio integrated silicon microstructures , 2002 .

[20]  Dana Weinstein,et al.  Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators , 2013, 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII).

[21]  R. A. Moore,et al.  Film bulk acoustic wave resonator technology , 1990, IEEE Symposium on Ultrasonics.

[22]  K. Lakin.  Thin film resonators and filters , 1999, 1999 IEEE Ultrasonics Symposium. Proceedings. International Symposium (Cat. No.99CH37027).

[23]  A. Ionescu,et al.  Very high frequency double-ended tuning fork nano-mechanical Fin-FET resonator , 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.

[24]  M. Rais-Zadeh,et al.  Monolithic integration of GaN-based micromechanical resonators and HEMTs for timing applications , 2012, 2012 International Electron Devices Meeting.

[25]  S. Pourkamali,et al.  High-Frequency Thermally Actuated Electromechanical Resonators With Piezoresistive Readout , 2011, IEEE Transactions on Electron Devices.

[26]  W. Wang,et al.  Si-based unreleased hybrid MEMS-CMOS resonators in 32nm technology , 2012, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS).

[27]  D. Weinstein,et al.  Deep Trench capacitor drive of a 3.3 GHz unreleased Si MEMS resonator , 2012, 2012 International Electron Devices Meeting.

[28]  P. Russell.  Photonic Crystal Fibers , 2003, Science.

[29]  Acoustic Bragg reflectors for Q-enhancement of unreleased MEMS resonators , 2011, 2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings.

[30]  Tsu-Jae King Liu,et al.  Technologies for Cofabricating MEMS and Electronics , 2008, Proceedings of the IEEE.

[31]  T. Kenny,et al.  Temperature-Insensitive Composite Micromechanical Resonators , 2009, Journal of Microelectromechanical Systems.

[32]  S. Bhave,et al.  ACOUSTIC RESONANCE IN AN INDEPENDENT-GATE FINFET , 2010 .

[33]  R. Ruby,et al.  Wafer-scale packaging for FBAR-based oscillators , 2011, 2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings.

[34]  R. Howe,et al.  Silicon nitride-on-silicon bar resonator using internal electrostatic transduction , 2005, The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05..