论文信息 - Spin-lattice relaxation of conduction electrons in silicon

Spin-lattice relaxation of conduction electrons in silicon

The width of the spin resonance of conduction electrons in n-type silicon, which is related to the spin-lattice relaxation time, has been measured at microwave frequencies, between helium and room temperature. There are two temperature regions of interest: (i) above about 50 °K scattering by lattice vibrations is the dominant relaxation mechanism, and the results are compared with existing theories due to Elliott and Yafet, and (ii) at lower temperatures the results are considered in the light of existing theories of scattering from ionized donor impurities.

[1] G. Feher,et al. Electron Spin Resonance Absorption in Metals. I. Experimental , 1955 .

[2] F. Dyson. Electron Spin Resonance Absorption in Metals. II. Theory of Electron Diffusion and the Skin Effect , 1955 .

[3] David Pines,et al. Relaxation Times in Magnetic Resonance , 1955 .

[4] Y. Yafet. g Factors and Spin-Lattice Relaxation of Conduction Electrons , 1963 .

[5] G. K. Walters. Application of magnetic resonance techniques to the study of semiconductor surfaces , 1960 .

[6] R. K. Wangsness,et al. The Dynamical Theory of Nuclear Induction , 1953 .

[7] T. Castner. Direct Measurement of the Valley-Orbit Splitting of Shallow Donors in Silicon , 1962 .

[8] G. Feher,et al. Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique , 1959 .

[9] C. Kittel,et al. Electron Spin Resonance in a Silicon Semiconductor , 1953 .

[10] R. J. Elliott,et al. Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors , 1954 .