Design issues of GaAs and AlGaAs delta-doped p-i-n quantum-well APD's

We examine the basic design issues in the optimization of GaAs delta-doped and AlGaAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control of the doping concentrations within each stage possibly enhancing the extant to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed. >