论文信息 - Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes - 字舞流文

Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes

T. Mishima | F. Horikiri | Tohru Nakamura | T. Yoshida | H. Ohta | Y. Narita | Toshio Kitamura | Takehiro Yoshida | Yoshinobu Narita