论文信息 - A new pinched-off cold FET model for the determination of small-signal equivalent circuit of a FET

A new pinched-off cold FET model for the determination of small-signal equivalent circuit of a FET

A pinched-off cold FET model is proposed to evaluate more accurately the parasitic gate and drain capacitances C/sub pg/ and C/sub pd/. Coupled with the new model, a new algorithm for the determination of the small-signal equivalent circuit of a FET is also presented. Good agreement between measured and simulated S-parameters from 1-26.5 GHz of a 400 /spl mu/m GaAs FET is obtained.

Ban-Leong Ooi | P. S. Kooi | Mook-Seng Leong

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