论文信息 - Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior

Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior

Incorporation of temperature dependencies in the one-dimensional Poisson's equation for use in numerical simulation of MOSFET threshold behavior from 350 to 50 K is discussed. Careful consideration has been given to accurate modeling of impurity freeze-out and temperature-dependent parameters. Examples of simulation of depletion-mode MOSFET's demonstrate the importance of proper modeling and show that impurity freezeout must be considered even at room temperature.

R. Jaeger | F. Gaensslen | F.H. Gaensslen | R.C. Jaeger

[1] R. Jaeger,et al. Low temperature threshold behavior of depletion mode devices—Characterization and simulation , 1977, 1977 International Electron Devices Meeting.

[2] R. Klopfenstein,et al. Computer solution of one-dimensional Poisson's equation , 1975, IEEE Transactions on Electron Devices.

[3] K. B. Wolfstirn. Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements , 1960 .

[4] H. D. Barber. Effective mass and intrinsic concentration in silicon , 1967 .