Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

In this letter, simple binary Ovonic threshold switching (OTS) material with outstanding selector device performance has been demonstrated. Even with its simple material composition and easy fabrication process, the selector device with the binary OTS material showed excellent selector performance such as high-OFF resistance (> 1 G <inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> at 0.1 V), low-ON resistance (< 1 k <inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> at 2.0 V), extremely sharp switching slope (< 1 mV/dec), fast operating speed (<inline-formula> <tex-math notation="LaTeX">$\text{t}_{\mathrm {transition}} <2$ </tex-math></inline-formula> ns, <inline-formula> <tex-math notation="LaTeX">$\text{t}_{\mathrm {delay}} <7$ </tex-math></inline-formula> ns), high endurance (> 10<sup>8</sup> cycles of 150 ns pulse), high electrical stability (> 1 ks at 1.2 V), and high thermal stability (> 400 °C / 30 min). Furthermore, conduction mechanism of the OTS has been explained by Poole-Frenkel-based analytical modeling.

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