High Gain $\times$ Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiNx antireflection coating. The combined properties of very low dark current (I dark(M = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.

[1]  Kikuo Makita,et al.  Dark Current and Breakdown Analysis in In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes , 1996 .

[2]  Mark A. Itzler,et al.  High-performance, manufacturable avalanche photodiodes for 10 Gb/s optical receivers , 2000, Optical Fiber Communication Conference. Technical Digest Postconference Edition. Trends in Optics and Photonics Vol.37 (IEEE Cat. No. 00CH37079).

[3]  E. Ishimura,et al.  Investigation of guardring-free planar AlInAs avalanche photodiodes , 2006, IEEE Photonics Technology Letters.

[4]  J.C. Campbell,et al.  Recent advances in avalanche photodiodes , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[5]  G. Post,et al.  In-situ surface preparation of InP-based semiconductors prior to direct UVCVD silicon nitride deposition for passivation purposes , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

[6]  M. Hopkinson,et al.  Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ , 2007, IEEE Journal of Quantum Electronics.

[7]  E. Ishimura,et al.  Guardring-Free Planar AlInAs Avalanche Photodiodes for 2.5-Gb/s Receivers With High Sensitivity , 2007, IEEE Photonics Technology Letters.

[8]  A. Cuevas,et al.  Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters , 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

[9]  M. Jazwiecki,et al.  A New Planar InGaAs–InAlAs Avalanche Photodiode , 2006, IEEE Photonics Technology Letters.

[10]  R. Mcintyre.  Multiplication noise in uniform avalanche diodes , 1966 .