Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry
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Depth profiles of Se‐implanted GaAs samples have been measured as a function of substrate temperature during ion implanation using secondary ion mass spectrometry (SIMS). It has been found that Se diffuses anomalously fast during the implantation and that this diffusion is independent of implant time. Annealing of these implanted layers following the implantation, however, produces no additional diffusion even when annealed at 1000 °C for 15 min.
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