A DC model for the HEMT including the effect of parasitic conduction
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[1] Sorab K. Ghandhi,et al. General theory for pinched operation of the junction-gate FET , 1969 .
[2] M. Shur,et al. Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As–GaAs Modulation Doped Layers , 1984 .
[3] W. A. Hughes,et al. Nonlinear charge control in AlGaAs/GaAs modulation-doped FET's , 1987, IEEE Transactions on Electron Devices.
[4] D. Delagebeaudeuf,et al. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.
[5] Hermann A. Haus,et al. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors , 1975 .
[6] P. Roblin,et al. A MODFET dc model with improved pinchoff and saturation characteristics , 1986, IEEE Transactions on Electron Devices.