ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application.

We present a ZnO(1-x) nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO(1-x) NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO(1-x) NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ~125° can be found on the ZnO(1-x) NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system.

[1]  J. R. Yeargan,et al.  The Poole-Frenkel effect with compensation present. , 1968 .

[2]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[3]  J. Yang,et al.  A Family of Electronically Reconfigurable Nanodevices , 2009 .

[4]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[5]  Tae-Wook Kim,et al.  One Transistor–One Resistor Devices for Polymer Non‐Volatile Memory Applications , 2009 .

[6]  Zhiyong Fan,et al.  Preparation and electrical/optical bistable property of potassium tetracyanoquinodimethane thin films , 2003 .

[7]  Frederick T. Chen,et al.  Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals , 2009 .

[8]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[9]  Jr-hau He,et al.  High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device , 2012 .

[10]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[11]  M. Tsai,et al.  Silicon introduced effect on resistive switching characteristics of WOX thin films , 2012 .

[12]  Hyunsang Hwang,et al.  Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications , 2010 .

[13]  Qi Liu,et al.  Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.

[14]  Peidong Yang,et al.  Solution-grown zinc oxide nanowires. , 2006, Inorganic chemistry.

[15]  Daniel Y. Kwok,et al.  Contact angle measurement and contact angle interpretation , 1999 .

[16]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[17]  S. Parkin,et al.  Magnetic Domain-Wall Racetrack Memory , 2008, Science.

[18]  N. Cheung,et al.  Extraction of Schottky diode parameters from forward current-voltage characteristics , 1986 .

[19]  Ronald S. Fearing,et al.  Wet and Dry Adhesion Properties of Self‐Selective Nanowire Connectors , 2009 .

[20]  Hyunsang Hwang,et al.  Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments , 2012 .

[21]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[22]  C. Hsieh,et al.  Electrochemical deposition and superhydrophobic behavior of ZnO nanorod arrays , 2010 .

[23]  Po-Tsung Hsieh,et al.  Luminescence mechanism of ZnO thin film investigated by XPS measurement , 2007 .

[24]  Bing Sun,et al.  Ionic doping effect in ZrO2 resistive switching memory , 2010 .

[25]  M. Wuttig,et al.  Phase-change materials for rewriteable data storage. , 2007, Nature materials.

[26]  Tae-Wook Kim,et al.  Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices , 2010, Advanced materials.

[27]  P. R. Emtage,et al.  Schottky Emission Through Thin Insulating Films , 1962 .

[28]  Hyoungsub Kim,et al.  Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films , 2012 .

[29]  A. Cassie,et al.  Wettability of porous surfaces , 1944 .

[30]  Lifeng Liu,et al.  Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach , 2011 .

[31]  Seung Chul Chae,et al.  Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures , 2008 .

[32]  Frederick T. Chen,et al.  Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications , 2008 .

[33]  H. Hwang,et al.  Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications , 2009, IEEE Electron Device Letters.

[34]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[35]  Jung-Hyun Lee,et al.  Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.

[36]  Kaige Wang,et al.  The super hydrophobicity of ZnO nanorods fabricated by electrochemical deposition method , 2011 .