Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells

The work was supported by the DFG (project Ka2318/5-1) and the Elite Network of Bavaria within the graduate program “Topological Insulators”.

[1]  Elena Plis,et al.  Passivation techniques for InAs/GaSb strained layer superlattice detectors , 2013 .

[2]  B. Nguyen,et al.  High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate , 2014, 1412.4817.

[3]  Chaoxing Liu,et al.  Quantum spin Hall effect in inverted type-II semiconductors. , 2008, Physical review letters.

[4]  L. Du,et al.  Images of edge current in InAs/GaSb quantum wells. , 2014, Physical review letters.

[5]  Atindra Nath Pal,et al.  Non-local transport via edge-states in InAs/GaSb coupled quantum wells , 2015, 1504.07032.

[6]  V. Gavrilenko,et al.  Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells , 2010 .

[7]  이주현,et al.  7 , 1871, Testament d'un patriote exécuté.

[8]  G. Sullivan,et al.  Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity , 2017 .

[9]  M. Manfra,et al.  Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells. , 2015, Physical review letters.

[10]  J. Pekarik,et al.  Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations , 1993 .

[11]  G. Tuttle,et al.  Photoconductivity in AlSb/InAs quantum wells , 1993 .

[12]  W. Mitchel,et al.  Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells , 1994 .

[13]  Shou-Cheng Zhang,et al.  Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells , 2006, Science.

[14]  L. Molenkamp,et al.  Quantum Spin Hall Insulator State in HgTe Quantum Wells , 2007, Science.

[15]  Noguchi,et al.  Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces. , 1991, Physical review letters.

[16]  Karlsson,et al.  Charge accumulation at InAs surfaces. , 1996, Physical review letters.

[17]  C. Kane,et al.  Topological Insulators , 2019, Electromagnetic Anisotropy and Bianisotropy.

[18]  A. Rosenberg The oxidation of intermetallic compounds—III: The room-temperature oxidation of AIIIBv compounds☆ , 1960 .

[19]  G. Sullivan,et al.  Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells , 2010, 1002.0360.

[20]  D. M. Gaponova,et al.  Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures , 2005 .

[21]  Patricia M. Mooney,et al.  Deep donor levels (DX centers) in III‐V semiconductors , 1990 .

[22]  Herbert Kroemer,et al.  Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface , 1990 .

[23]  G. Sullivan,et al.  Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator. , 2011, Physical review letters.

[24]  Atindra Nath Pal,et al.  Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices , 2015, 1502.06697.

[25]  Rui-Rui Du,et al.  Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells. , 2014, Physical review letters.

[26]  E. J. Mele,et al.  Z2 topological order and the quantum spin Hall effect. , 2005, Physical review letters.

[27]  M. Manfra,et al.  Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry. , 2016, Physical review letters.

[28]  L. Du,et al.  Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells , 2015, 1508.04509.

[29]  M. Handzic 5 , 1824, The Banality of Heidegger.

[30]  Andrew G. Glen,et al.  APPL , 2001 .

[31]  Y. Chen,et al.  Positive and negative persistent photoconductivities in semimetallic AlxGa1−xSb/InAs quantum wells , 1999 .

[32]  T. Ihn,et al.  Passivation of edge states in etched InAs sidewalls , 2017, 1706.01704.

[33]  K. Onomitsu,et al.  Edge channel transport in the InAs/GaSb topological insulating phase , 2013, 1306.4234.

[34]  Werner Wegscheider,et al.  Insulating state and giant nonlocal response in an InAs/GaSb quantum well in the quantum Hall regime. , 2014, Physical review letters.

[35]  G. Tuttle,et al.  Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells , 1989 .

[36]  B Andrei Bernevig,et al.  Quantum spin Hall effect. , 2005, Physical review letters.

[37]  G. Sullivan,et al.  Evidence for helical edge modes in inverted InAs/GaSb quantum wells. , 2011, Physical review letters.

[38]  L. Du,et al.  Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators. , 2016, Physical review letters.

[39]  Antonio-José Almeida,et al.  NAT , 2019, Springer Reference Medizin.

[40]  J. Witters,et al.  Negative persistent photoconductivity in an InAs/GaSb quantum well , 1999 .